Depth distribution of 0.4-1.6 keV deuterium ions implanted into polystyrene and hydrogenated carbon

Citation
Gg. Ross et al., Depth distribution of 0.4-1.6 keV deuterium ions implanted into polystyrene and hydrogenated carbon, NUCL INST B, 164, 2000, pp. 324-336
Citations number
20
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
164
Year of publication
2000
Pages
324 - 336
Database
ISI
SICI code
0168-583X(200004)164:<324:DDO0KD>2.0.ZU;2-4
Abstract
At low energy, large-angle multiple scattering influences the depth distrib ution of ions implanted into materials. Therefore, Monte Carlo codes have b een widely used to calculate the depth distribution of implanted ions. Howe ver. these codes give results which can sometimes be significantly differen t from experimental measurements. In addition, during the implantation of p olymers and hydrogenated carbon layers, a given quantity of hydrogen atoms can be released. which changes the stopping power and influences the depth distribution. Finally, the local accumulation of electric charges also modi fy the ion distribution. In order to quantify the effect of each contributi on, samples of hydrogenated carbon and polystyrene (PS) have been implanted with low energy (0.4-1.6 keV) deuterium ions. An experimental procedure is described which takes into account the effects mentioned above in order to measure the mean ranges (R-p) and standard deviations (sigma) of the depth distributions by means of the ERD ExB technique. Results show that both th e R-p and a decrease with the quantity of hydrogen in the materials. The ex perimental data in PS films are not in good agreement with the computer sim ulations while those in the a-C:H layers are well reproduced using TRIM.SP with the krypton-carbon interatomic potential and the Oen-Robinson electron ic energy loss model. Comparison of the experimental D depth profiles in PS with the D depth profiles and the damage profiles as simulated by TRIM.SP and with the H loss profile following the D implantation suggests that the implanted D could be trapped in the damage profile induced by the implantat ion. (C) 2000 Elsevier Science B.V. All rights reserved.