Dose and implantation temperature influence on extended defects nucleationin c-Si

We have investigated the effects of implantation temperature on the extende d defect nucleation processes near the threshold dose where these defects a ppear after annealing. Defects induced by 230 keV P implantation were obser ved before and after annealing by means of channeling Rutherford backscatte ring spectroscopy (c-RBS), extended defect delineation etching (Wright etch ) and transmission electron microscopy (TEM). It is revealed that the physi cal nature of the threshold is a steep increase of extended defect areal de nsity, by 5-6 orders of magnitude, between 0.6 x 10(14) and 2 x 10(14) P/cm (2). The implantation temperature influences this density only at higher do ses, for which higher temperatures contribute to reduce the number of exten ded defects. Second, c-RBS data before annealing show that the number of pr imary point defects is constant with dose at 300 degrees C whereas it shows a linear dependence for room temperature implantation. This implies that t he configuration of the point defects depends on dose and temperature, whic h strongly influences extended defect nucleation during subsequent annealin g. (C) 2000 Published by Elsevier Science B.V. All rights reserved.