Production of recoil H-atoms and their transportation in a-Si:H are calcula
ted by using a Monte Carlo simulation program in order to evaluate the suit
ability of the electron impact method for elastic recoil detection analysis
of H-atoms. Contained H-atoms are assumed to be homogeneously distributed
with the concentration of 30 at.%. Energy of electrons is set to be 32 keV
and incident angle 0.5 degrees with respect to the surface. Dependence of e
nergy distributions of emitted H-atoms on the depth from which they are ori
ginated is examined for the surface layer with the depth of 0-8 Angstrom an
d possibility of H-atom depth profiling is discussed. (C) 2000 Elsevier Sci
ence B.V. All rights reserved.