Monte Carlo calculation of elastic recoil H-atom emission induced by fast electron impact

Production of recoil H-atoms and their transportation in a-Si:H are calcula ted by using a Monte Carlo simulation program in order to evaluate the suit ability of the electron impact method for elastic recoil detection analysis of H-atoms. Contained H-atoms are assumed to be homogeneously distributed with the concentration of 30 at.%. Energy of electrons is set to be 32 keV and incident angle 0.5 degrees with respect to the surface. Dependence of e nergy distributions of emitted H-atoms on the depth from which they are ori ginated is examined for the surface layer with the depth of 0-8 Angstrom an d possibility of H-atom depth profiling is discussed. (C) 2000 Elsevier Sci ence B.V. All rights reserved.