The weak concentration dependence of Ni diffusivity in NiGa has formerly be
en interpreted as evidence for Ni diffusion via next-nearest-neighbor jumps
, which seems reasonable in the light of the comparably high enthalpy of fo
rmation found in this alloy. Quasielastic neutron scattering (QNS) at the b
ackscattering spectrometer IN16 at ILL has been used to study the elementar
y diffusion jump of Ni in NiGa single crystals near the stoichiometric comp
osition Ni50Ga50 as well as in polycrystals with 57 at. % Ni and 62 at. % N
i. While the weak concentration dependence of the Ni diffusion coefficient
has been confirmed over a wide concentration range on the Ni-rich site of t
he NiGa phase diagram, the diffusive jump of Ni atoms unequivocally turned
out to be a jump via nearest-neighbor sites, i.e., antistructure sites. For
the near-stoichiometric compositions it was possible to determine the resi
dence time of the Ni atoms on the antistructure sites directly from the QNS
measurements. These results indicate very high defect concentrations near
the melting temperature.