We report on long-range electronic effects caused by hydrogen-carbon intera
ction at the graphitesurface. Two types of defects could be distinguished w
ith a combined mode of scanning tunneling microscopy and atomic force micro
scopy: chemisorption of hydrogen on the basal plane of graphite and atomic
vacancy formation. Both types show a (root 3 X root 3)R30 degrees superlatt
ice in the locll density of states but have a different topographic structu
re. The range of modifications in the electronic structure, of fundamental
importance for electronic devices based on carbon nanostructures, has been
found to be of the order of 20-25 lattice constants.