We describe the electrical failure of thin films as a percolation in two-di
mensional random resistor networks. We show that the resistance evolution f
ollows a sealing relation expressed as R similar to epsilon(-mu) where epsi
lon = (1 - t/tau). tau is the time of electrical failure of the film, and m
u is the same critical exponent appearing in the scaling relation between R
and the defect concentration. For uniform degradation the value of mu is u
niversal. The validity of this scaling relation in the case of nonuniform d
egradation is proved by discussing the case in which the failure is due to
a filamentary defect growth. The existence of tills relation allows predict
ions of failure times from early time measurements of the resistance.