Nucleationless three-dimensional island formation in low-misfit heteroepitaxy

Authors
Sutter, P Lagally, MG
Citation
P. Sutter et Mg. Lagally, Nucleationless three-dimensional island formation in low-misfit heteroepitaxy, PHYS REV L, 84(20), 2000, pp. 4637-4640
Citations number
22
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
84
Issue
20
Year of publication
2000
Pages
4637 - 4640
Database
ISI
SICI code
0031-9007(20000515)84:20<4637:NTIFIL>2.0.ZU;2-5
Abstract
The formation of faceted three-dimensional islands during growth of low-mis fit Si1-xGex alloys on Si(100) has been investigated by low-energy electron microscopy. The formation of the islands in these alloy systems does not i nvolve three-dimensional nucleation, but rather proceeds via a precursor ar ray of shallow, stepped mounds on the surface that result from the inherent morphological instability of the strained alloy film.