Scanning tunneling microscopy identification of atomic-scale intermixing on Si(100) at submonolayer Ge coverages

Citation
Xr. Qin et al., Scanning tunneling microscopy identification of atomic-scale intermixing on Si(100) at submonolayer Ge coverages, PHYS REV L, 84(20), 2000, pp. 4645-4648
Citations number
28
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
84
Issue
20
Year of publication
2000
Pages
4645 - 4648
Database
ISI
SICI code
0031-9007(20000515)84:20<4645:STMIOA>2.0.ZU;2-D
Abstract
The positions of Ge atoms intermixed in the Si(100) surface at very low con centration are identified using empty-state imaging in scanning tunneling m icroscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions.