Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs

Authors
Yoon, J Li, CC Shahar, D Tsui, DC Shayegan, M
Citation
J. Yoon et al., Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs, PHYS REV L, 84(19), 2000, pp. 4421-4424
Citations number
31
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
84
Issue
19
Year of publication
2000
Pages
4421 - 4424
Database
ISI
SICI code
0031-9007(20000508)84:19<4421:PMFITI>2.0.ZU;2-U
Abstract
A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an extern al magnetic field, can drive the system into insulating at a finite field t hrough a well-defined transition. The value of resistivity at the transitio n is found to depend strongly on density.