CMOS planar 2D micro-fluxgate sensor

Citation
L. Chiesi et al., CMOS planar 2D micro-fluxgate sensor, SENS ACTU-A, 82(1-3), 2000, pp. 174-180
Citations number
8
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
09244247 → ACNP
Volume
82
Issue
1-3
Year of publication
2000
Pages
174 - 180
Database
ISI
SICI code
0924-4247(20000515)82:1-3<174:CP2MS>2.0.ZU;2-R
Abstract
An electronic compass made of a new planar 2D micro-fluxgate sensor is pres ented. The magnetometer is integrated in a standard CMOS process, and uses a post-processed cross-shaped ferromagnetic amorphous core. This core is di agonally placed above a single square excitation coil common to both measur ement axes. The silicon chip includes the driving and readout electronics, the excitation and pick-up coils made of the two CMOS process metallization layers. The ferromagnetic core is integrated from commercially available a morphous metal ribbons, by using a post-process compatible with standard IC technologies. Such a ferromagnetic core presents outstanding magnetic char acteristics compared to usual electroplated cores. The micro-fluxgate works with a pulse-shaped driving current which allows t he sensor output to be independent of the driving frequency. The current pu lse width ratio of 1/8 reduces drastically the power consumption. For magne tic fields within +/-60 mu T, the micro-fluxgate sensor exhibits a magnetic sensitivity of 3760 V/T at 125 kHz with an amplification gain of 26.4 dB. The angle error on the Earth's magnetic field is +/- 1.5 degrees. The chip has a power consumption of 12.5 mW for a 17 mA-peak driving current; its ar ea is of 5.3 mm(2). (C) 2000 Elsevier Science S.A. All rights reserved.