Low-temperature anodic bonding to silicon nitride

Low-temperature anodic bonding to stoichiometric silicon nitride surfaces h as been performed in the temperature range from 350 degrees C to 400 degree s C. It is shown that the bonding is improved considerably if the nitride s urfaces are either oxidized or exposed to an oxygen plasma prior to the bon ding. Both bulk and thin-film glasses were used in the bonding experiments. Bond quality was evaluated using a tensile test on structured dies. The ef fect of oxygen-based pre-treatments of the nitride surface on the bond qual ity has been evaluated. Bond strengths up to 35 N/mm(2) and yields up to 10 0% were obtained. (C) 2000 Elsevier Science S.A. All rights reserved.