Fracture toughness of polysilicon MEMS devices

Citation
H. Kahn et al., Fracture toughness of polysilicon MEMS devices, SENS ACTU-A, 82(1-3), 2000, pp. 274-280
Citations number
13
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
09244247 → ACNP
Volume
82
Issue
1-3
Year of publication
2000
Pages
274 - 280
Database
ISI
SICI code
0924-4247(20000515)82:1-3<274:FTOPMD>2.0.ZU;2-C
Abstract
Polysilicon fracture mechanics specimens have been fabricated using standar d microelectro-mechanical systems (MEMS) processing techniques, with charac teristic dimensions comparable to typical MEMS devices. These specimens are fully integrated with simultaneously fabricated electrostatic actuators th at are capable of providing sufficient force to ensure catastrophic crack p ropagation. Thus, the entire fracture experiment takes place on-chip, elimi nating the difficulties associated with attaching the specimen to an extern al loading source. The specimens incorporate atomically sharp cracks create d by indentation, and fracture is initiated using monotonic electrostatic l oading. The fracture toughness values are determined using finite element a nalysis (FEA) of the experimental data, and show a median value of 1.1 MPa m(1/2). (C) 2000 Elsevier Science S.A. All rights reserved.