An accurate relationship for determining the key parameters of MOSFETs by proportional difference operator method

An improved version of the proportional difference operator method is prese nted for the determination of key parameters of a MOSFET, including thresho ld voltage and carrier mobility, and results in the proportional difference output characteristics of a MOSFET, which manifests spectral property. The accurate relationship between key parameters and the peak of the proportio nal difference output characteristic is provided. Subsequently, a simple di scussion of the practical application of this method under different bias c onditions, i.e. substrate biases, is also given. Further, some approximate equations with enough accuracy are provided to simplify the calculation com plexity. (C) 2000 Elsevier Science Ltd. All rights reserved.