Evaluation of transport properties of ozonized poly/mono interfaces in polysilicon emitter bipolar transistors

Authors
Niel, S Chantre, A Llinares, P Laurens, M Vincent, G
Citation
S. Niel et al., Evaluation of transport properties of ozonized poly/mono interfaces in polysilicon emitter bipolar transistors, SOL ST ELEC, 44(6), 2000, pp. 963-967
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
6
Year of publication
2000
Pages
963 - 967
Database
ISI
SICI code
0038-1101(200006)44:6<963:EOTPOO>2.0.ZU;2-8
Abstract
Temperature-dependent electrical measurements have been performed to determ ine hole and electron transport properties across the poly/mono interface i n polysilicon emitter bipolar transistors. A tunneling probability has been extracted, and the results are correlated with noise parameters. (C) 2000 Elsevier Science Ltd. All rights reserved.