Citation
Yc. Choi et al., Catalytic growth of beta-Ga2O3 nanowires by arc discharge, ADVAN MATER, 12(10), 2000, pp. 746
Citations number
19
Categorie Soggetti
Multidisciplinary,"Material Science & Engineering
Journal title
ADVANCED MATERIALS
ISSN journal
09359648
→ ACNP
Volume
12
Issue
10
Year of publication
2000
Database
ISI
SICI code
0935-9648(20000517)12:10<746:CGOBNB>2.0.ZU;2-H
Abstract
Monoclinic gallium oxide nanowires are prepared here by are discharge of Ga
N powder in the presence of a small amount of transition metal catalyst. Th
e nanowires are characterized by X-ray diffraction, energy dispersive X-ray
spectroscopy, and Raman spectroscopy, and evidence as to the mechanism of
their formation (shown in the Figure) is obtained by high-resolution transm
ission electron microscopy.