BISTABLE ELECTROLUMINESCENCE OF TUNNELING SILICON MOS STRUCTURES

Authors
ALTUKHOV PD BULGAKOV AG IVANOV GV KUZMINOV EG
Citation
Pd. Altukhov et al., BISTABLE ELECTROLUMINESCENCE OF TUNNELING SILICON MOS STRUCTURES, Solid state communications, 103(2), 1997, pp. 103-106
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
103
Issue
2
Year of publication
1997
Pages
103 - 106
Database
ISI
SICI code
0038-1098(1997)103:2<103:BEOTSM>2.0.ZU;2-Z
Abstract
The recombination radiation line of surface two-dimensional electrons and nonequilibrium holes is observed in electroluminescence spectra of tunneling [100] silicon MOS diodes under tunneling injection of holes at T = 1.5 K. The tunneling current and electroluminescence in these structures are bistable due to existence of two ways of the hole injec tion. (C) 1997 Elsevier Science Ltd.