Wavelength switching by positively detuned side-mode injection in semiconductor lasers

Citation
Y. Hong et al., Wavelength switching by positively detuned side-mode injection in semiconductor lasers, APPL PHYS L, 76(22), 2000, pp. 3170-3172
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
22
Year of publication
2000
Pages
3170 - 3172
Database
ISI
SICI code
0003-6951(20000529)76:22<3170:WSBPDS>2.0.ZU;2-7
Abstract
The experimental observation of a side-mode resonance regime in intermodal injection of a Fabry-Perot semiconductor laser is reported. It is shown tha t wavelength switching can be easily affected by the use of positively detu ned side-mode injection. Nearly degenerate four-wave mixing is observed in both positive and negative detuning regimes. (C) 2000 American Institute of Physics. [S0003- 6951(00)02522-5].