Citation
D. Ochoa et al., Spontaneous emission model of lateral light extraction from heterostructure light-emitting diodes, APPL PHYS L, 76(22), 2000, pp. 3179-3181
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
76
Issue
22
Year of publication
2000
Pages
3179 - 3181
Database
ISI
SICI code
0003-6951(20000529)76:22<3179:SEMOLL>2.0.ZU;2-C
Abstract
We investigate the extraction of light from semiconductor light-emitting di
odes made of dielectric multilayer stacks with quantum-well sources. The mo
del is a combination of a rigorous vertical model of dipole emission and an
in-plane ray-tracing model. The vertical model is shown to conveniently pr
ovide the relevant horizontal decay length of the various kinds of in-plane
propagating modes. The proposed combination of the two models accounts for
the lateral extraction as well as light recycling in the active layers. (C
) 2000 American Institute of Physics. [S0003- 6951(00)02822-9].