Epitaxial growth and magnetic properties of single-crystal Co2MnGe Heusleralloy films on GaAs (001)

Single-crystal Co2MnGe Heusler alloy films were epitaxially grown on GaAs ( 001) substrates by molecular beam epitaxy. In situ reflection high-energy e lectron diffraction patterns and Auger spectroscopy confirmed the high-qual ity growth and stoichiometry. At 5 K, a saturation magnetization of 1000 em u/cm(3) was measured. In-plane ferromagnetic resonance shows narrow linewid ths and four-fold plus uniaxial anisotropy. A room-temperature resistivity of 115 mu Omega cm has also been determined. The temperature dependence of the resistivity shows metallic behavior down to low temperatures. (C) 2000 American Institute of Physics. [S0003-6951(00)04222-4].