AlGaN-GaN-AlInGaN induced base transistor

We have simulated an induced base transistor based on n-type GaN-AlGaN-GaN- AlInGaN heterostructure with a thin AlGaN emitter barrier and a thin GaN qu antum well base. Our simulations show that such a majority carrier device s hould have a high collector current density, a low base resistance, a high current gain, and is expected to be a viable competitor to GaN-based hetero structure bipolar junction transistors. (C) 2000 American Institute of Phys ics. [S0003-6951(00)00922-0].