ENHANCED CONDUCTANCE IN SUPERCONDUCTOR SEMICONDUCTOR JUNCTIONS AT ZERO-VOLTAGE

Authors
MAGNEE PHC VANDERPOST N VANWEES BJ KLAPWIJK TM
Citation
Phc. Magnee et al., ENHANCED CONDUCTANCE IN SUPERCONDUCTOR SEMICONDUCTOR JUNCTIONS AT ZERO-VOLTAGE, Physica. B, Condensed matter, 194, 1994, pp. 1031-1032
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
1
Pages
1031 - 1032
Database
ISI
SICI code
0921-4526(1994)194:<1031:ECISSJ>2.0.ZU;2-I
Abstract
An enhancement of the zero-voltage conductance of a niobium-silicon ju nction is found at very low temperatures. This enhancement is a result of quantum interference of electrons, near the superconductor semicon ductor interface, which results in an increase of Andreev reflection p robability.