METAL-INSULATOR-TRANSITION IN THIOSPINEL CUIR2S4

Citation
S. Nagata et al., METAL-INSULATOR-TRANSITION IN THIOSPINEL CUIR2S4, Physica. B, Condensed matter, 194, 1994, pp. 1077-1078
Citations number
3
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
1
Pages
1077 - 1078
Database
ISI
SICI code
0921-4526(1994)194:<1077:MITC>2.0.ZU;2-M
Abstract
We have discovered the existence of metal-insulator transition at appr oximately 220 K in the new thiospinel CuIr2S4. The electrical conducti vity, sigma, for sintered-powder specimens drops abruptly from 2 x 10( 2) S.cm-1 to 5 x 10(-1)S.cm-1 at T(M-I) approximately 220 K with decre asing temperature. At temperatures T<T(M-I), CuIr2S4 exhibits a semico nductive behavior with thermally activated conductivity, which is fitt ed by the formula: sigma = Aexp(-q/k(B)T). The slope of the lnsigma vs l/T curve just below the transition gives an activation energy of q = 4.7 x 10(-2) eV for the conduction.