LOW-TEMPERATURE MEASUREMENTS OF THE DIELECTRIC-CONSTANT AND LOSS OF BORON-DOPED SILICON

Authors
BIGGAR RD LANE KR PARPIA JM
Citation
Rd. Biggar et al., LOW-TEMPERATURE MEASUREMENTS OF THE DIELECTRIC-CONSTANT AND LOSS OF BORON-DOPED SILICON, Physica. B, Condensed matter, 194, 1994, pp. 1079-1080
Citations number
2
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
1
Pages
1079 - 1080
Database
ISI
SICI code
0921-4526(1994)194:<1079:LMOTDA>2.0.ZU;2-V
Abstract
We have measured the capacitance of a silicon wafer contained between two bulk metallic electrodes. The capacitance has a prominent feature which is frequency and magnetic field dependent at a temperature of ab out 5K for a 0.2OMEGA-cm nominal resistance sample, and which is seen to be replicated at higher temperature for a 100OMEGA-cm sample.