Thin-film wafer fusion fabrication technology for buried heterostructure InGaAsP/InP lasers on GaAs

Authors
Ohiso, Y Iga, R Kishi, K Amano, C
Citation
Y. Ohiso et al., Thin-film wafer fusion fabrication technology for buried heterostructure InGaAsP/InP lasers on GaAs, ELECTR LETT, 35(22), 1999, pp. 1955-1957
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
22
Year of publication
1999
Pages
1955 - 1957
Database
ISI
SICI code
0013-5194(19991028)35:22<1955:TWFFTF>2.0.ZU;2-9
Abstract
A new fabrication technology is proposed in which thin-film wafer fusion is used to develop high-performance optoelectronic devices on a lattice-misma tched substrate. By using this technology, buried-heterostructure InP-based lasers on GaAs substrate have been realised for the first time. A continuo us-wave threshold current of 10.6mA has been realised with a stable fundame ntal transverse mode.