Coplanar waveguide transmission lines and high Q inductors on CMOS grade silicon using photoresist and polyimide

Citation
G. Ternent et al., Coplanar waveguide transmission lines and high Q inductors on CMOS grade silicon using photoresist and polyimide, ELECTR LETT, 35(22), 1999, pp. 1957-1958
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
22
Year of publication
1999
Pages
1957 - 1958
Database
ISI
SICI code
0013-5194(19991028)35:22<1957:CWTLAH>2.0.ZU;2-5
Abstract
Gold coplanar waveguide (CPW) transmission lines with losses of < 0.5dB/mm at 60GHz have been produced on CMOS grade silicon substrates using a 15 mu m thick layer of either photoresist or polyimide. This process, together wi th an electroplated interconnect technique, has been used to produce spiral inductors on a 2 Omega/cm n-Si substrate with a Q of 15 and L of 1.2nH at 6GHz.