Analytical approximation for perturbation of MOSFET surface potential by polysilicon depletion layer

Authors
Gildenblat, G Chen, TL Bendix, P
Citation
G. Gildenblat et al., Analytical approximation for perturbation of MOSFET surface potential by polysilicon depletion layer, ELECTR LETT, 35(22), 1999, pp. 1974-1976
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
22
Year of publication
1999
Pages
1974 - 1976
Database
ISI
SICI code
0013-5194(19991028)35:22<1974:AAFPOM>2.0.ZU;2-6
Abstract
Compact MOSFET models require a computationally efficient description of th e polysilicon depletion effect. An analytical solution is presented for the perturbation of the MOSFET surface potential by the polysilicon depletion region. Unlike earlier closed-form approximations, the new result is valid in all regions of the device operation and is compatible with surface-poten tial-based MOSFET models.