STUDY OF FORMATION AND SOME PROPERTIES OF TI-C-H FILMS PREPARED BY DC-MAGNETRON SPUTTERING

The Ti-C:H films with different titanium content were prepared by d.c. magnetron sputtering of a titanium target in an argon-methane gas mix ture, The influence of CH4 flow rate on deposition rate, composition, IR transmission spectra, electrical resistivity of the films and on th e target voltage change was observed. The character of target voltage change at high CH4 flow rates, when discharge became unstable, was als o studied. The connection of target voltage with CH4 flow rate and con sequently composition of obtained films at constant discharge power wa s found. This allows to control the deposition process in a simple way and reproduce the Ti-C:H coatings with small metal content about 10at .% and more. It was found that IR transmission spectra are very sensit ive to small metal content in the films in the range of 10-20at.% tita nium. It was shown that in our conditions increasing the substrate bia s leads to a slight increase of titanium concentration and decrease of IR transmission at high CH4 flow rates.