TEMPERATURE AND ELECTRIC-FIELD DEPENDENCIES OF PBCO C-AXIS RESISTIVITY IN YBCO PBCO/AU STRUCTURES/

Authors
BOGUSLAVSKIJ YM VERHOEVEN MAJ ROESTHUIS FJG GERRITSMA GJ ROGALLA H
Citation
Ym. Boguslavskij et al., TEMPERATURE AND ELECTRIC-FIELD DEPENDENCIES OF PBCO C-AXIS RESISTIVITY IN YBCO PBCO/AU STRUCTURES/, Physica. B, Condensed matter, 194, 1994, pp. 1115-1116
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
1
Pages
1115 - 1116
Database
ISI
SICI code
0921-4526(1994)194:<1115:TAEDOP>2.0.ZU;2-8
Abstract
The current-voltage characteristics of YBCO/PBCO/Au planar structures reflect the resistance behavior of PBCO in the c-axis direction. With increasing applied voltages the PBCO barrier shows a transition from t hermally-activated hopping conductivity to an activationless-hopping r egime. Variable-range hopping and weak-localization models are discuss ed to explain the experimental data. An account of the Lifshitz correl ation in the hopping conductivity gives an satisfactory agreement with the junction resistivity for c-axis PBCO barrier thicknesses of 10 to 40 nm.