TRANSMISSION ELECTRON-MICROSCOPE OBSERVATIONS OF DISLOCATIONS IN HETEROEPITAXIAL LAYERS OF CDTE-(CDHG)TE ON GAAS

Authors
PATRIARCHE G GIRARDFRANCOIS A RIVIERE JP CASTAING J
Citation
G. Patriarche et al., TRANSMISSION ELECTRON-MICROSCOPE OBSERVATIONS OF DISLOCATIONS IN HETEROEPITAXIAL LAYERS OF CDTE-(CDHG)TE ON GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 45(1-3), 1997, pp. 76-84
Citations number
21
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
45
Issue
1-3
Year of publication
1997
Pages
76 - 84
Database
ISI
SICI code
0921-5107(1997)45:1-3<76:TEOODI>2.0.ZU;2-E
Abstract
Growth of (CdHg)Te on GaAs has been performed by metal-organic vapor p hase epitaxy (MOVPE) with ZnTe as a buffer. The various steps of the d eposition have been studied by transmission electron microscopy with a special emphasis on dislocation generation. The high density of dislo cations is a consequence of the large misfit between the substrate and the II-VI semiconductors. The intercalation of strained lavers is not under control in order to decrease the number of dislocations in the upper part of the system. (C) 1997 Elsevier Science S.A.