G. Patriarche et al., TRANSMISSION ELECTRON-MICROSCOPE OBSERVATIONS OF DISLOCATIONS IN HETEROEPITAXIAL LAYERS OF CDTE-(CDHG)TE ON GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 45(1-3), 1997, pp. 76-84
Growth of (CdHg)Te on GaAs has been performed by metal-organic vapor p
hase epitaxy (MOVPE) with ZnTe as a buffer. The various steps of the d
eposition have been studied by transmission electron microscopy with a
special emphasis on dislocation generation. The high density of dislo
cations is a consequence of the large misfit between the substrate and
the II-VI semiconductors. The intercalation of strained lavers is not
under control in order to decrease the number of dislocations in the
upper part of the system. (C) 1997 Elsevier Science S.A.