RECENT ACHIEVEMENTS IN SEMICONDUCTOR DEFECT PASSIVATION

The full understanding of processes occurring during impurities and de fect passivation is of both practical and theoretical interest. The fi rst topic considered in the present paper is the study of a new passiv ation methodology, based on the use of catalytic hydrogenation. It wil l be seen that the application of this technique associated with the u se of deuterium in-depth profiling and microstructural characterizatio n contributes to a better understanding of the passivation mechanism f or polycrystalline silicon. The second topic considered is an attempt to extend the surface passivation to silicon via transition metal chem isorption. The technique is already successfully employed for compound semiconductors. It will be shown that the different surface chemistry involved is the reason for the lack of success encountered. Finally, the application of the light-beam-induced current (LBIC) technique in the lateral configuration will be discussed with respect to surface pa ssivation monitoring, and its full applicability will be demonstrated. (C) 1997 Elsevier Science S.A.