LASER PROCESSING OF II-VI COMPOUNDS FOR IMPROVED DOPING - APPLICATIONTO ZNSE-N

II-VI materials have not been as widely used or studied as the III-V a nd elemental semiconductors, but are nevertheless useful and interesti ng as well. Obtaining adequate doping for good device properties in th e wide-gap II-VIs has been a persistent problem. We focus on this aspe ct here, with particular emphasis on obtaining p-type ZnSe with N dopi ng. We shall discuss reasons for trying non-equilibrium incorporation, as well as our work on excimer laser processing as a means of accompl ishing this. We also discuss some important differences in decompositi on properties between II-VI and III-V compounds. (C) 1997 Elsevier Sci ence S.A.