Silicon : germanium-based mixed-signal technology for optimization of wired and wireless telecommunications

Authors
Citation
Bs. Meyerson, Silicon : germanium-based mixed-signal technology for optimization of wired and wireless telecommunications, IBM J RES, 44(3), 2000, pp. 391-407
Citations number
37
Categorie Soggetti
Multidisciplinary,"Computer Science & Engineering
Journal title
IBM JOURNAL OF RESEARCH AND DEVELOPMENT
ISSN journal
00188646 → ACNP
Volume
44
Issue
3
Year of publication
2000
Pages
391 - 407
Database
ISI
SICI code
0018-8646(200005)44:3<391:S:GMTF>2.0.ZU;2-3
Abstract
The need to serve the explosion in data bandwidth demand for fixed and mobi le applications has driven transistor performance requirements beyond the r each of conventional silicon devices. Scaling limits of silicon-based bipol ar transistors have been encountered, confining further performance gains b y traditional means, but cost considerations favor the continued use of sil icon-derived technology solutions. Silicon: germanium (Si:Ge) heterojunctio n bipolar transistors (HBTs) and subsequent generations of highly integrate d SiGe BICMOS processes stem from long-term efforts initiated at IBM to dev elop such a silicon-derived technology. This paper reviews the application- driven origins of this SiGe technology, how it has evolved, and how limits to conventional silicon bipolar scaling have enhanced its adoption in the s emiconductor industry. Examples of the entry of this technology into commer cial applications in the wired and wireless marketplace are discussed.