Design and characteristics of n-channel insulated-gate field-effect transistors (Reprinted from IBM Journal of Research and Development, vol 17, 1973)

Authors
Critchlow, DL Dennard, RH Schuster, SE
Citation
Dl. Critchlow et al., Design and characteristics of n-channel insulated-gate field-effect transistors (Reprinted from IBM Journal of Research and Development, vol 17, 1973), IBM J RES, 44(1-2), 2000, pp. 70-82
Citations number
10
Categorie Soggetti
Multidisciplinary,"Computer Science & Engineering
Journal title
IBM JOURNAL OF RESEARCH AND DEVELOPMENT
ISSN journal
00188646 → ACNP
Volume
44
Issue
1-2
Year of publication
2000
Pages
70 - 82
Database
ISI
SICI code
0018-8646(200001/03)44:1-2<70:DACONI>2.0.ZU;2-U
Abstract
An n-channel insulated-gate field-effect transistor technology established at IBM Research has served as the basis for further development leading to FET memory. Designs and characteristics of experimental devices of 500 and 1000 Angstrom gate insulator thicknesses are presented, with particular att ention to the effects of source-drain spacing.