Finite-element analysis of semiconductor devices: The FIELDAY program (Reprinted from IBM Journal of Research and Development, vol 25, 1981)

The FIELDAY program simulates semiconductor devices of arbitrary shape in o ne, two, or three dimensions operating under transient or steady-state cond itions. A wide variety of physical effects, important in bipolar and field- effect transistors, can be modeled. The finite-element method transforms th e continuum description of mobile carrier transport in a semiconductor devi ce to a simulation model at a discrete number of points. Coupled and decoup led algorithms offer two methods of linearizing the differential equations. Direct techniques are used to solve the resulting matrix equations. Pre- a nd post-processors enable users to rapidly generate new models and analyze results. Specific examples illustrate the flexibility and accuracy of FIELD AY.