Effect of ionising radiation on the characteristics of a MOSFET

The effect of radiation-induced changes on the characteristics of an n-chan nel MOSFET has been investigated theoretically. A one-dimensional semi-nume rical model of the device has been developed which call estimate fairly acc urate characteristics of the device under unirradiated and irradiated condi tions. The effect of ionising radiation on the channel voltage and electric field profile in the channel has been estimated numerically for the first: time. The present model enables one to determine the I-D-V-D and transfer characteristics of the device by considering the field dependent mobility o f the surface channel in the irradiated condition. The model presented here can be used as a basic tool for analysing MOS transistors exposed to a nuc lear environment.