DC model of GaAs MESFET5 improving circuit simulation

Authors
Giorgio, A Passaro, VMN Perri, AG
Citation
A. Giorgio et al., DC model of GaAs MESFET5 improving circuit simulation, IEE P-CIRC, 147(2), 2000, pp. 139-145
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS
ISSN journal
13502409 → ACNP
Volume
147
Issue
2
Year of publication
2000
Pages
139 - 145
Database
ISI
SICI code
1350-2409(200004)147:2<139:DMOGMI>2.0.ZU;2-N
Abstract
An improved DC model of low- and high-power GaAs MESFETs is proposed. Third -order dependence of fitting parameters on bias conditions is included. The main objective is to obtain a very good agreement between measured and sim ulated I-V curves, particularly in the knee and saturation regions, regardl ess of the technological characteristics of the device. The model has been compared with the most significant models presented in the literature, show ing some significant improvements of the state-of-the-art.