Characterization of p and n-type bulk InSb crystals grown by vertical directional solidification technique

Crystal growth of undoped and Te-doped InSb single crystals has been achiev ed by the modified vertical directional solidification (VDS) technique. The grown crystals of undoped,growth are p-type with carrier concentration and mobility of the order of 2.4 x 10(6) cm(-3) and 5.6 x 10(4) cm(2) /Vs at 3 00 K and 1.32 x 10(16) cm(-3) and 3.4 x 10(3) cm(2)/ Vs at 20 K. Te doped c rystals are n-type with electron density (5.2 x 10(17) cm(-3)) virtually re maining unchanged with temperature up to 20 K. While mobility has increased with decrease in temperature (3 x 10(4) cm(2)/Vs at 20 K). Growth morpholo gy reveals the eutectic microstructures but heavily Te-doped growth showed striation, band formation and precipitation. The quality of InSb crystals h ave been improved by the optimized growth conditions.