Gamma irradiation of platinum- and palladium-related deep levels in silicon

Effect of 1.1 MeV gamma irradiation has been studied on Au/n- Si:Pt and Au/ n-Si:Pd Schottky barrier diodes. A comparison of the results from these two types of structures illustrate the influence of device processing on the t ype of defects formed by subsequent irradiation. Before irradiation the ene rgy levels for Pt and Pd in n-type silicon have been observed at E-c-0.28 e V, E-c-0.52 eV and E-c-0.22 eV respectively. After irradiation and annealin g all the energy levels due to irradiation are disappeared except E-c-0.28 eV in Au/n-Si:Pt and E-c-0.22 eV in Au/n-Si:Pd Schottky diodes.