ORIGIN OF OSCILLATORY MAGNETORESISTANCE IN ZR-N FILMS

Authors
YOSHIZAWA M KITAGAWA Y SUGAWARA H SAITO M YOTSUYA T YOSHITAKE M
Citation
M. Yoshizawa et al., ORIGIN OF OSCILLATORY MAGNETORESISTANCE IN ZR-N FILMS, Physica. B, Condensed matter, 194, 1994, pp. 1149-1150
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
1
Pages
1149 - 1150
Database
ISI
SICI code
0921-4526(1994)194:<1149:OOOMIZ>2.0.ZU;2-8
Abstract
Zr-N films in the variable-range-hopping region show an oscillatory ma gnetoresistance (MR). MR consists of a linear negative MR (LNMR) below 1.5T, a positive one above 1.5 T and again a negative MR in higher fi eld. We investigated the origin of LNMR. The LNMR of Zr-N films can be quantitatively interpreted by a quantum coherence effect that is char acteristically seen in VRH regime.