Electronic density of states at the interface between silicon and lead borosilicate glass

Authors
Vlasov, SI Parchinskii, PB Olmatov, BA
Citation
Si. Vlasov et al., Electronic density of states at the interface between silicon and lead borosilicate glass, INORG MATER, 36(5), 2000, pp. 502-503
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
36
Issue
5
Year of publication
2000
Pages
502 - 503
Database
ISI
SICI code
0020-1685(200005)36:5<502:EDOSAT>2.0.ZU;2-J
Abstract
The density-of-states distribution in the band gap of Si at the interface b etween Si and lead borosilicate (SiO2-PbO-B2O3-Al2O3-Ta2O5) glass was asses sed by C-V measurements. It is shown that reducing the temperature at which the passivating glass coating is applied decreases the interfacial density of states to a level comparable with the density of surface states on ther mally oxidized Si.