The density-of-states distribution in the band gap of Si at the interface b
etween Si and lead borosilicate (SiO2-PbO-B2O3-Al2O3-Ta2O5) glass was asses
sed by C-V measurements. It is shown that reducing the temperature at which
the passivating glass coating is applied decreases the interfacial density
of states to a level comparable with the density of surface states on ther
mally oxidized Si.