Structural changes in phosphorus-ion-implanted silicon

Authors
Kuznicki, ZT Tsyakh, R Swiaek, Z Raranskii, ND Fodchuk, IM Gorlei, PN Kadel'nik, DV
Citation
Zt. Kuznicki et al., Structural changes in phosphorus-ion-implanted silicon, INORG MATER, 36(5), 2000, pp. 508-510
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
36
Issue
5
Year of publication
2000
Pages
508 - 510
Database
ISI
SICI code
0020-1685(200005)36:5<508:SCIPS>2.0.ZU;2-1
Abstract
The structural changes produced in the near-surface region of single-crysta l Si upon fabrication of delta back-surface-field devices were studied by x -ray diffraction in an offset-asymmetric geometry. The results demonstrate that implantation of 180-keV P+ ions into Si with a dose on the order of 10 (15) cm(-2), followed by thermal annealing, allows buried amorphous Si laye rs to be produced. The structures thus prepared suffer a significant lattic e strain perpendicular to the interface.