Physical properties of cadmium selenide layers produced by solid-state substitution reactions

Authors
Makhnii, VP Makhnii, EV Fodchuk, IM
Citation
Vp. Makhnii et al., Physical properties of cadmium selenide layers produced by solid-state substitution reactions, INORG MATER, 36(5), 2000, pp. 518-519
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
36
Issue
5
Year of publication
2000
Pages
518 - 519
Database
ISI
SICI code
0020-1685(200005)36:5<518:PPOCSL>2.0.ZU;2-H
Abstract
Hexagonal and cubic CdSe layers were produced on single-crystal CdS and ZnS e substrates by solid-state substitution reactions. The room-temperature co nductivity of the layers is dominated by donor levels with ionization energ ies of 0.7 and 0.16 eV for alpha- and beta-CdSe, respectively. The 300-K ph otoluminescence spectra of the layers show two emissions differing in origi n: one is due to interband transitions, and the other to dissociation of ex citons upon inelastic scattering from electrons.