The avalanche process in the edge region of the metal gate in a metal-oxide-semiconductor structure

Kinetics of forming the edge region of a metal-oxide-semiconductor (MOS) st ructure is considered in the mode of the avalanche electron injection into the dielectric. The forming process is investigated by studying the kinetic s of a photoresponse to trapezoidal voltage pulses (TVPs) exciting an MOS s tructure. The photoresponse exponentially varies with time, and relaxation time constant tau is characterized by a complex dependence on the amplitude of the forming pulse. First, tau increases with the voltage pulse and reac hes its maximum. Then, it abruptly decreases and remains virtually constant at a fixed level.