TRANSIENT THERMOELECTRIC EFFECT OF BISMUTH CRYSTAL UNDER STATIC MAGNETIC-FIELD

Citation
M. Sasaki et al., TRANSIENT THERMOELECTRIC EFFECT OF BISMUTH CRYSTAL UNDER STATIC MAGNETIC-FIELD, Physica. B, Condensed matter, 194, 1994, pp. 1199-1200
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
1
Pages
1199 - 1200
Database
ISI
SICI code
0921-4526(1994)194:<1199:TTEOBC>2.0.ZU;2-G
Abstract
For an extension of a dynamic technique, called the photo-induced ''tr ansient thermoelectric effect (TTE),'' to study multicarrier transport in various solids, we have studied the effect of static magnetic fiel ds on the TTE for bismuth crystals as a test sample. The TTE signals u nder magnetic fields show an asymmetric behavior for the reversal of t he magnetic field direction. The analysis of TTE decay curves gives mu ltiple relaxation times corresponding to different types of electrons, which show anomalous magnetic field dependence.