Growth of amorphous semiconductors: tight-binding molecular dynamics study

In our computer simulation the preparation process was similar to the atom- by-atom deposition onto a substrate which is a standard procedure to prepar e amorphous semicondutors. For the calculation of the interactions between carbon and silicon atoms, tight-binding potentials wen used. The Newton equ ations of motion were solved by the Verlet algorithm. (C) 2000 Elsevier Sci ence B.V. All rights reserved.