Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films

Authors
Lenahan, PM Mele, JJ Lowry, RK Woodbury, D
Citation
Pm. Lenahan et al., Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films, J NON-CRYST, 266, 2000, pp. 835-839
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
266
Year of publication
2000
Part
B
Pages
835 - 839
Database
ISI
SICI code
0022-3093(200005)266:<835:LCASDB>2.0.ZU;2-9
Abstract
We use electron spin resonance and current density versus electric field me asurements to link silicon dangling bond defects, called E' centers, to lea kage currents in thin films of SiO2 on silicon. (C) 2000 Elsevier Science B .V. All rights reserved.