Temperature dependence of photoluminescence intensity and decay in GeSe2 glass

Citation
O. Matsuda et al., Temperature dependence of photoluminescence intensity and decay in GeSe2 glass, J NON-CRYST, 266, 2000, pp. 908-912
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
266
Year of publication
2000
Part
B
Pages
908 - 912
Database
ISI
SICI code
0022-3093(200005)266:<908:TDOPIA>2.0.ZU;2-X
Abstract
The intensity and decay profile of the photoluminescence (PL) in grassy GeS e2 are measured as a function of temperature from 7 to 200 K. The intensity decreases exponentially in the temperature region >100 K. The complicated temperature dependence of the decay profile as well as the dependence of th e intensity are explained in a unified framework by adopting a model of the luminescent sites whose thermal activation energy for the non-radiative pr ocess is distributed. We show that the intensity variation is affected by t he non-radiative process while the decay life time depends almost only on t he radiative transition rate. (C) 2000 Elsevier Science B.V. All rights res erved.