Influence of temperature, light intensity and electrical field on the photoinduced dichroism in chalcogenide thin films

Citation
P. Hertogen et Gj. Adriaenssens, Influence of temperature, light intensity and electrical field on the photoinduced dichroism in chalcogenide thin films, J NON-CRYST, 266, 2000, pp. 948-953
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
266
Year of publication
2000
Part
B
Pages
948 - 953
Database
ISI
SICI code
0022-3093(200005)266:<948:IOTLIA>2.0.ZU;2-6
Abstract
An experimental study of temperature, light intensity, and externally appli ed electrical fields on photoinduced linear dichroism (PDi) in amorphous As 2S3 and As2Se3 films is reported. Light intensity dependence of the saturat ion of the PDi is observed both at room temperature and at temperatures clo se to the glass transition temperature. The build-up kinetics of PDi are an alyzed as a function of temperature and light intensity. The results show t hat existing models are only valid to a first approximation. Dark relaxatio n of PDi is measured, showing effects of the probe beam. (C) 2000 Elsevier Science B.V. All rights reserved.