Is there avalanche multiplication in amorphous semiconductors?

Authors
Arkhipov, VI Kasap, SO
Citation
Vi. Arkhipov et So. Kasap, Is there avalanche multiplication in amorphous semiconductors?, J NON-CRYST, 266, 2000, pp. 959-963
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
266
Year of publication
2000
Part
B
Pages
959 - 963
Database
ISI
SICI code
0022-3093(200005)266:<959:ITAMIA>2.0.ZU;2-3
Abstract
A model of the avalanche carrier multiplication in amorphous materials is s uggested. The model is based on the concept of sub-gap impact ionization co ntrolled by thermally assisted dissociation of generated geminate pairs of carriers. The obtained results explain an experimentally observed positive temperature dependence of the avalanche multiplication factor in amorphous selenium. (C) 2000 Elsevier Science B.V. All rights reserved.