The photoluminescence in polysilanes (exemplified on poly(methylphenylsilyl
ene) - PMPSi) during the change from linear 1D Si chain to amorphous 3D Si
networks was studied. The excitonic absorption observed in 1D Si at 320 nm
undergoes a blue shift on introducing branching and networking defects. Wit
h the transition to the 3D structure the redistribution of oscillator inten
sity along the absorption edge with the loss of the resolved sigma-sigma* b
and edge occurs. Further, the disappearance of main-chain exciton sigma-sig
ma* and appearance of the defect luminescence at 450 nm exhibiting red shif
t with increasing 3D networking are observed. (C) 2000 Elsevier Science B.V
. All rights reserved.